Organic light-emitting display device and method of manufacturing the same

ABSTRACT

The organic light-emitting display device includes: a substrate including a transistor region; and a thin-film transistor formed over the transistor region of the substrate and having a planarization film which is disposed over a source/drain electrode and a pixel defining layer which includes an aperture exposing a portion of a first electrode electrically connected to the source/drain electrode and defining a pixel region, wherein an outgassing hole is formed in a region of the pixel defining layer other than the aperture to expose the planarization film.

This application claims priority from Korean Patent Application No.10-2011-0000269 filed on Jan. 3, 2011 in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein byreference in its entirety.

BACKGROUND

1. Field

The present disclosure relates to an organic light-emitting displaydevice and a method of manufacturing the same, and more particularly, toan organic light-emitting display device which is not damaged byoutgassing generated in a planarization film.

2. Description of the Related Technology

The rapid development of the information and technology (IT) industry isdramatically increasing the use of display devices. Recently, there havebeen demands for display devices that are lightweight and thin, consumelow power and provide high resolution. To meet these demands, liquidcrystal displays or organic light-emitting displays using organiclight-emitting characteristics are being developed.

Organic light-emitting displays, which are next-generation displaydevices having self light-emitting characteristic, have bettercharacteristics than liquid crystal displays in terms of viewing angle,contrast, response speed and power consumption, and can be manufacturedto be thin and lightweight since a backlight is not required.

An organic light-emitting display includes a substrate having a displayregion and a non-display region and a container or another substratewhich is placed to face the substrate for encapsulation and attached tothe substrate by a sealant such as epoxy. In the display region of thesubstrate, a plurality of organic light-emitting diodes (OLEDs) areconnected in a matrix pattern between scan lines and data lines to formpixels. In the non-display region, the scan lines and the data linesextending from the scan lines and the data lines of the display region,power source supply lines for operating the OLEDs, and a scan driver anda data driver for processing signals received from an external sourcevia input pads and providing the processed signals to the scan lines andthe data lines are formed.

An organic light-emitting display is manufactured by forming asemiconductor layer, a gate electrode and a source/drain electrode on asubstrate, forming a planarization film on the resultant structure toplanarize the substrate, forming a pixel defining layer, which defines apixel region, on the planarization film, and forming an organiclight-emitting layer on the pixel defining layer.

The organic light-emitting layer may be formed using a nozzle printingmethod. In the nozzle printing method, a micro nozzle forms an organiclight-emitting layer by spraying an organic light-emitting material asit passes over a pixel region. After nozzle printing, a baking processis performed. Here, the baking process may be performed several times.

During the baking process, outgassing may be generated in theplanarization film that is made of an organic material. However, sincethe pixel defining layer made of an inorganic material is disposed onthe planarization film, the outgassing cannot be released from theplanarization film. The trapped outgassing may inflate inside theplanarization film or may deform the planarization film, therebydeforming the pixel defining layer and an electrode. The deformed pixeldefining layer and the deformed electrode may cause defects.

SUMMARY

Aspects of the present invention provide an organic light-emittingdisplay device, in which the deformation of a planarization film and apixel defining layer is avoided by releasing outgassing generated in aplanarization film during a baking process that accompanies a nozzleprinting process from the planarization film and which has a low defectrate caused by outgassing, and a method of manufacturing the organiclight-emitting display device.

However, aspects of the present invention are not restricted to the oneset forth herein. The above and other aspects of the present inventionwill become more apparent to one of ordinary skill in the art to whichthe present invention pertains by referencing the detailed descriptiongiven below.

According to an aspect of the present invention, there is provided anorganic light-emitting display device including: a substrate including atransistor region; and a thin-film transistor formed on the transistorregion of the substrate and having a planarization film which isdisposed on a source/drain electrode and a pixel defining layer whichincludes an aperture exposing a portion of a first electrodeelectrically connected to the source/drain electrode and defining apixel region, wherein an outgassing hole is formed in a region of thepixel defining layer other than the aperture to expose the planarizationfilm.

According to another aspect of the present invention, there is providedan organic light-emitting display device including: a substrateincluding a transistor region; and a thin-film transistor formed on thetransistor region of the substrate and having a planarization film whichis disposed on a source/drain electrode and a pixel defining layer whichincludes an aperture exposing a portion of a first electrodeelectrically connected to the source/drain electrode and defining apixel region, wherein an outgassing hole is formed in a region of thepixel defining layer other than the aperture to expose the planarizationfilm, and an organic passivation film is formed on the outgassing holeto cover edges of the outgassing hole.

According to another aspect of the present invention, there is provideda method of manufacturing an organic light-emitting display device. Themethod includes: forming a planarization film on a transistor region ofa substrate; forming a first electrode, which is electrically connectedto a source/drain electrode, on the planarization film; providing apixel defining layer which includes an aperture exposing a portion ofthe first electrode to define the pixel region; forming an outgassinghole in a region of the pixel defining layer other than the aperture toexpose the planarization film; and forming an organic light-emittinglayer on the first electrode of the pixel region by using a nozzleprinting process, wherein outgassing generated by the planarization filmin the forming of the organic light-emitting layer is released from theplanarization film through the outgassing hole.

According to another aspect of the present invention, there is provideda method of manufacturing an organic light-emitting display device. Themethod includes: forming a planarization film on a transistor region ofa substrate; forming a first electrode, which is electrically connectedto a source/drain electrode, on the planarization film; providing apixel defining layer which includes an aperture exposing a portion ofthe first electrode to define the pixel region; forming an outgassinghole in a region of the pixel defining layer other than the aperture toexpose the planarization film; forming an organic passivation film onthe outgassing hole to cover edges of the outgassing hole; and formingan organic light-emitting layer on the first electrode of the pixelregion by using a nozzle printing process, wherein outgassing generatedby the planarization film in the forming of the organic light-emittinglayer is released from the planarization film through the organicpassivation film and the outgassing hole.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present invention willbecome more apparent by describing in detail embodiments thereof withreference to the attached drawings, in which:

FIG. 1 is a cross-sectional view of an organic light-emitting displaydevice according to an embodiment of the present invention;

FIG. 2 is a plan view of the organic light-emitting display device shownin FIG. 1;

FIG. 3 is a diagram illustrating a process of forming an organiclight-emitting layer in the organic light-emitting display device ofFIG. 2 by using a nozzle printing method;

FIGS. 4 through 12 are views sequentially illustrating a method ofmanufacturing an organic light-emitting display device according to anembodiment of the present invention;

FIG. 13 is a partial cross-sectional view of an organic light-emittingdisplay device according to another embodiment of the present invention;

FIG. 14 is a cross-sectional view of an organic passivation film formedin the organic light-emitting display device of FIG. 13;

FIG. 15 is a plan view of the organic light-emitting display deviceshown in FIG. 13; and

FIGS. 16 and 17 are views sequentially illustrating a method ofmanufacturing an organic light-emitting display device according toanother embodiment of the present invention.

DETAILED DESCRIPTION OF EMBODIMENTS

Advantages and features of the present invention and methods ofaccomplishing the same may be understood more readily by reference tothe following detailed description of embodiments and the accompanyingdrawings. The present invention may, however, be embodied in manydifferent forms and should not be construed as being limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete and will fully conveythe concept of the invention to those skilled in the art, and thepresent invention will only be defined by the appended claims. In thedrawings, sizes and relative sizes of layers and regions may beexaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on” another element or layer, the element or layer can bedirectly on another element or layer or intervening elements or layersmay also be present. In contrast, when an element is referred to asbeing “directly on” another element or layer, there are no interveningelements or layers present. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

Spatially relative terms, such as “below”, “beneath”, “lower”, “above”,“upper”, and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation, in addition to theorientation depicted in the figures.

Embodiments of the invention are described herein with reference to planand cross-section illustrations that are schematic illustrations ofembodiments of the invention. As such, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, embodiments of theinvention should not be construed as limited to the particular shapes ofregions illustrated herein but are to include deviations in shapes thatresult, for example, from manufacturing. Thus, the regions illustratedin the figures are schematic in nature and their shapes are not intendedto illustrate the actual shape of a region of a device and are notintended to limit the scope of the invention.

Hereinafter, embodiments of the present invention will be described infurther detail with reference to the accompanying drawings.

An embodiment of the present invention will now be described withreference to FIGS. 1 through 3. FIG. 1 is a cross-sectional view of anorganic light-emitting display device according to an embodiment of thepresent invention. FIG. 2 is a plan view of the organic light-emittingdisplay device shown in FIG. 1. FIG. 3 is a diagram illustrating aprocess of forming an organic light-emitting layer in the organiclight-emitting display device of FIG. 2 by using a nozzle printingmethod.

The organic light-emitting display device according to an embodiment ofthe present invention includes a substrate 10, a buffer layer 12 whichis disposed on the substrate 10, a semiconductor layer 14 which isdisposed on the buffer layer 12 of a transistor region of the substrate10, a gate electrode 18 which is insulated from the semiconductor layer14, a gate insulating film 16 which insulates the semiconductor layer 14from the gate electrode 18, a source/drain electrode 22 which isinsulated from the gate electrode 18 and is electrically connected tothe semiconductor layer 14 by a contact hole, a planarization film 26which is disposed on the source/drain electrode 22, a first electrode 28which is disposed on the planarization film 26 and is electricallyconnected to the source/drain electrode 22, and a pixel defining layer30 which is formed on the first electrode 28 and includes an aperture 32exposing a portion of the first electrode 28 to define a pixel region.In a region of the pixel defining layer 30 other than the aperture 32,an outgassing hole 34 is formed to expose the planarization film 26.

The substrate 10 may be made of a transparent glass material containingSiO₂ as a main component. However, the material that forms the substrate10 is not limited to the transparent glass material. The substrate 10may also be made of a transparent plastic material that may be aninsulating organic material selected from the group consisting ofpolyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI),polyethylene napthalate (PEN), polyethylene terephthalate (PET),polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate(PC), cellulose triacetate (TAC), and cellulose acetate propionate(CAP).

In a case where the organic light-emitting display device is a bottomemission organic light-emitting display device in which an image isrealized toward the substrate 10, the substrate 10 should be made of atransparent material. However, in a case where the organiclight-emitting display device is a top emission organic light-emittingdisplay device in which an image is realized away from the substrate 10,the substrate 10 may not necessarily be made of a transparent material.In this case, the substrate 10 may be made of metal. When the substrate10 is made of metal, the substrate 10 may include at least one materialselected from the group consisting of carbon, iron, chrome, manganese,nickel, titanium, molybdenum, and stainless steel (SUS). However, thematerial that forms the substrate 10 is not limited to the abovematerials. The substrate 10 may also be made of metal foil.

The buffer layer 12 may further be formed on the substrate 10 toplanarize the substrate 10 and prevent penetration of impurities intothe substrate 10. The buffer layer 12 may be a single layer of SiOx,SiNx or SiO2Nx, or a multilayer of these materials.

The semiconductor layer 14 is formed on the buffer layer 12. Thesemiconductor layer 14 may be made of silicon (Si), i.e., amorphoussilicon (a-Si). Alternatively, the semiconductor layer 14 may be made ofpolycrystalline silicon (p-Si). Otherwise, the semiconductor layer 14may be made of, but is not limited to, Ge, GaP, GaAs, or AlAs. Thesemiconductor layer 14 may be a silicon semiconductor layer formed bylightly diffused n-type impurities of a silicon-on-insulator (SOI)substrate. Alternatively, the semiconductor layer 14 may be formed bydoping a portion of amorphous silicon with P-type or N-type impurities.

The gate insulating film 16 is disposed on the semiconductor layer 14 tocover the semiconductor layer 14 and insulates the semiconductor layer14 and the gate electrode 18 from each other. Like the buffer layer 12,the gate insulating film 16 may be a single layer of SiO2, SiNx orSiO2Nx, or a multilayer of these materials. The gate insulating film 16may be made of the same material as the buffer layer 12 or of adifferent material from that of the buffer layer 12.

The gate electrode 18 is formed on the gate insulating film 16. The gateelectrode 18 transmits a gate signal to control the light-emittingoperation of each pixel. The gate electrode 18 may be a single layer ofan Al alloy, such as Al, Cr—Al, Mo—Al or Al—Nd, or a multilayer of a Cror Mo alloy and an Al alloy stacked on the Cr or Mo alloy.

An interlayer insulating film 20 is formed on the gate electrode 18. Theinterlayer insulating film 20 electrically insulates the gate electrode18 from the source/drain electrode 22. Like the buffer layer 12, theinterlayer insulating film 20 may be a single layer of SiO2, SiNx orSiO2Nx, or a multilayer of these materials.

The source/drain electrode 22 is formed on the interlayer insulatingfilm 20 and is electrically connected to the semiconductor layer 14. Thesource/drain electrode 22 may be made of any one material selected fromMo, Cr, W, MoW, Al, Al—Nd, Ti, TiN, Cu, a Mo alloy, an Al alloy, and aCu alloy. The source/drain electrode 22 is electrically connected to thefirst electrode 28 by the semiconductor layer 14 via a contact hole andthus applies a voltage to the first electrode 28.

An additional insulating film 24 may be provided on the source/drainelectrode 22, and the planarization film 26 is provided on theinsulating film 24 to planarize the substrate 10. When a panel ismanufactured using the nozzle printing method, it is important to ensurethe flatness of the substrate 10. Therefore, the planarization film 26is used to maintain the flatness of the substrate 10 at a predeterminedlevel. The planarization film 26 may be made of an organic acrylicmaterial.

The first electrode 28 is disposed on the planarization film 26 and iselectrically connected to the source/drain electrode 22. The firstelectrode 28 and the source/drain electrode 22 may be connected to eachother by a contact hole that penetrates the insulating film 24 and theplanarization film 26. Therefore, as described above, a driving voltagemay be applied from the source/drain electrode 22 to the first electrode28.

The first electrode 28 may be made of one or more transparent conductivematerials selected from indium tin oxide (ITO), indium zinc oxide (IZO),carbon nanotubes, a conductive polymer, and nanowires. That is, thefirst electrode 28 may be made of a mixture of one or more of thetransparent conductive materials.

The pixel defining layer 30 defining the pixel region may be formed onthe first electrode 28. The pixel defining layer 30 is formed on theentire surface of the substrate 10 to cover the planarization film 26.The aperture 32 exposing a portion of the first electrode 28 is formedin the pixel defining layer 30 to define the pixel region. The pixeldefining layer 30 may be a single layer of an inorganic material, suchas SiO2, SiNx or SiO2Nx, or may be a multilayer of these materials.

Since the planarization film 26 is made of an organic material asdescribed above, outgassing may be generated during a baking processthat accompanies a nozzle printing process. However, the pixel defininglayer 30 formed on the planarization film 26 prevents the outgassingfrom being released from the planarization film 26.

To allow the outgassing generated during the baking process to bereleased from the planarization film 26, the outgassing hole 34 isformed in the pixel defining layer 30 according to an embodiment. Theoutgassing hole 43 may be formed in a plurality. Here, the outgassingholes 34 may be arranged at predetermined intervals along a directionthat is parallel to at least a surface of the pixel region.

That is, as shown in FIG. 2, when the aperture 32 is rectangular, thepixel region defined by the rectangular aperture 32 may also berectangular. In this case, a plurality of outgassing holes 34 may beformed along at least one edge (in a vertical direction in FIG. 2) ofthe pixel region.

As described above, the outgassing hole 34 formed in the pixel defininglayer 30 to expose an upper surface of the planarization film 26 allowsoutgassing generated by the organic planarization film 26 during abaking process to be released from the planarization film 26.Accordingly, the internal pressure of the planarization film 26 can bereduced, and a corresponding pixel can be prevented from being defectivedue to the lifting off from the planarization film 26 by the firstelectrode 28 or the pixel defining layer 30.

Referring to FIG. 3, when an organic light-emitting layer 36 is formedon the portion of the fist electrode 28, which is exposed by theaperture 32, using the nozzle printing method, a nozzle sprays anorganic light-emitting material while shuttling along a directionindicated by arrows. If the outgassing hole 34 is formed on a path alongwhich the nozzle moves, it may affect the thickness uniformity of theorganic light-emitting layer 36 being printed. Therefore, the outgassinghole 34 may be formed in a region other than the path along which thenozzle moves during nozzle printing.

The organic light-emitting display device according to an embodiment mayfurther include the organic light-emitting layer 36 formed on the firstelectrode 28 of the pixel region by nozzle printing and a secondelectrode 38 formed on the organic light-emitting layer 36.

Hereinafter, a method of manufacturing an organic light-emitting displaydevice according to an embodiment of the present invention will bedescribed with reference to FIGS. 4 through 12. FIGS. 4 through 12 areviews sequentially illustrating a method of manufacturing an organiclight-emitting display device according to an embodiment of the presentinvention.

The method of manufacturing an organic light-emitting display deviceaccording to an embodiment includes forming a buffer layer on asubstrate, forming a semiconductor layer on the buffer layer of atransistor region of the substrate, forming a gate electrode film on thesemiconductor layer, forming a gate electrode on the gate insulatingfilm, forming a source/drain electrode which is insulated from the gateelectrode and is electrically connected to the semiconductor layer by acontact hole, forming a planarization film on the source/drainelectrode, forming a first electrode, which is electrically connected tothe source/drain electrode, on the planarization film, providing a pixeldefining layer which includes an aperture exposing a portion of thefirst electrode to define a pixel region, forming an outgassing hole ina region of the pixel defining layer other than the aperture to exposethe planarization film, and forming an organic light-emitting layer onthe first electrode of the pixel region by using a nozzle printingmethod. Outgassing generated by the planarization film in the forming ofthe organic light-emitting layer is released from the planarization filmthrough the outgassing hole.

Referring to FIG. 4, a substrate 10 is provided, and a buffer layer 12is formed on the substrate 10. A pixel region and a transistor regioncan be defined arbitrarily. The pixel region is a region which actuallygenerates light due to an organic light-emitting layer formed therein.The transistor region is a region in which a thin-film transistor (TFT)including a gate electrode, a source/drain electrode, and asemiconductor layer is formed to apply a driving voltage to the organiclight-emitting layer of the pixel region. The types of the substrate 10that can be used are as described above. The buffer layer 12 is formedon the substrate 10 to planarize the substrate 10 and preventpenetration of impurities into the substrate 10.

Referring to FIG. 5, a semiconductor layer 14 is formed on the bufferlayer 12, and a gate insulating film 16 is formed on the semiconductorlayer 14. As described above, the semiconductor layer 14 is formed inthe transistor region in order to constitute a TFT.

Referring to FIG. 6, a gate electrode 18 electrically insulated from thesemiconductor layer 14 is formed on the gate insulating film 16. Asdescribed above, the gate electrode 18 may be a single metal layer or astack of a plurality of metal layers.

Referring to FIG. 7, an interlayer insulating film 20 is formed on thegate electrode 18. The interlayer insulating film 20 electricallyinsulates the gate electrode 18 from a source/drain electrode 22. Theinterlayer insulating film 20 may be formed on the entire surface of thesubstrate 10. Then, the interlayer insulating film 20 in a region otherthan the transistor region may be removed. In addition, a contact holeis formed to connect the source/drain electrode 22 to the semiconductorlayer 14.

Referring to FIG. 8, the source/drain electrode 22 is formed to beelectrically connected to the semiconductor layer 14, and an additionalinsulating film 24 may further be provided on the source/drain electrode22. Accordingly, a TFT including the semiconductor layer 14, the gateelectrode 18, and the source/drain electrode 22 is completed.

Referring to FIG. 9, a planarization film 26 is formed on the entiresurface of the substrate 10. As described above, the planarization film26 may be made of one or more organic acrylic materials and improves theflatness of the substrate 10. A contact hole is formed at a location,which corresponds to the source/drain electrode 22, in the planarizationfilm 26, and a first electrode 28 connected to the source/drainelectrode 22 by the contact hole is formed. An end of the firstelectrode 28 is formed in the transistor region, and the other end ofthe first electrode 28 is formed in the pixel region.

Referring to FIG. 10, a pixel defining layer 30 is formed on the firstelectrode 28. The pixel defining layer 30 is made of an inorganicmaterial. An aperture 32 exposing partly or entirely the first electrode28 is formed in the pixel defining layer 30 to define the pixel region.

Referring to FIG. 11, an outgassing hole 34 exposing the planarizationfilm 26 is formed in part of the pixel defining layer 30. As describedabove, the outgassing hole 34 may be formed in a plurality. Here, theoutgassing holes 34 may be arranged at predetermined intervals along adirection that is parallel to at least one surface of the pixel region.

The outgassing hole 34 may be formed in the pixel defining layer 30using various etching methods such as dry etching.

The outgassing hole 34 formed in the pixel defining layer 30 may havesharp edges as shown in the drawing. In particular, when dry etching isused to form the outgassing hole 34, the edges of the outgassing hole 34may be sharp. Thus, a second electrode 38 formed on the outgassing hole34 is highly likely to short-circuit or be damaged by the sharp edges ofthe outgassing hole 34. For this reason, after the outgassing hole 34 isformed, a process of rounding the edges of the outgassing hole 34 may beadditionally performed. The rounding of the edges of the outgassing hole34 can be achieved by an additional etching process.

Referring to FIG. 12, an organic light-emitting layer 36 is provided ona portion of the first electrode 28 exposed by the aperture 32, and thesecond electrode 38 is formed on the organic light-emitting layer 36. Asdescribed above, the organic light-emitting layer 36 may be formed usingthe nozzle printing method. The organic light-emitting layer 36 providedbetween the first electrode 28 and the second electrode 38 emits light,thereby displaying desired image information.

When the organic light-emitting layer 36 is formed using the nozzleprinting method, a baking process is repeatedly performed to remove asolvent and the like. Accordingly, outgassing is generated in theplanarization film 26. Here, since the organic light-emitting displaydevice manufactured using the method of manufacturing an organiclight-emitting display device according to an embodiment includes theoutgassing hole 34, the outgassing generated in the planarization film26 can be released from the planarization film 26 through the outgassinghole 34, and thus deforming or damaging the planarization film 26 or afilm stacked on the planarization film 26 can be minimized.

In addition, since the outgassing hole 34 is formed in a region otherthan a path along which a nozzle moves during nozzle printing, it doesnot affect the nozzle printing process of the organic light-emittinglayer 36.

Hereinafter, an organic light-emitting display device according toanother embodiment of the present invention will be described withreference to FIGS. 13 through 15. FIG. 13 is a partial cross-sectionalview of an organic light-emitting display device according to anotherembodiment of the present invention. FIG. 14 is a cross-sectional viewof an organic passivation film 40 formed in the organic light-emittingdisplay device of FIG. 13.

The organic light-emitting display device according to an embodimentincludes a substrate 10, a buffer layer 12 which is disposed on thesubstrate 10, a semiconductor layer 14 which is disposed on the bufferlayer 12 of the transistor region, a gate electrode 18 which isinsulated from the semiconductor layer 14, a gate insulating film 16which insulates the semiconductor layer 14 from the gate electrode 18, asource/drain electrode 22 which is insulated from the gate electrode 18and is electrically connected to the semiconductor layer 14 by a contacthole, a planarization film 26 which is disposed on the source/drainelectrode 22, a first electrode 28 which is disposed on theplanarization film 26 and is electrically connected to the source/drainelectrode 22, and a pixel defining layer 30 which is formed on the firstelectrode 28 and includes an aperture 32 exposing a portion of the firstelectrode 28 to define a pixel region. In a region of the pixel defininglayer 30 other than the aperture 32, an outgassing hole 34 is formed toexpose the planarization film 26. The organic passivation film 40 isformed on the outgassing hole 34 to cover edges E of the outgassing hole34.

The organic light-emitting display device according to an embodiment hasthe same configuration as the organic light-emitting display deviceaccording to the previous embodiment, except that the organicpassivation film 40 covering the edges E of the outgassing hole 34 isfurther provided on the outgassing hole 34.

Referring to FIG. 13, when the outgassing hole 34 is formed by dryetching, it has the edges E which may cause, e.g., a second electrode 38stacked on the outgassing hole 34 to short-circuit. Therefore, the edgesE of the outgassing hole 34 may be rounded through an additional etchingprocess. Alternatively, in an embodiment of the present invention, theorganic passivation film 40 may further be formed to cover the edges Eof the outgassing hole 34, as shown in FIG. 14. The organic passivationfilm 40 may be made of an organic material such as DL1000CR. Since theorganic passivation film 40 covers sharp portions (such as the edges E)of the outgassing hole 34, it can prevent the second electrode 38 fromshort-circuiting. The organic passivation film 40 may be formed to coverall or part of the outgassing hole 34. The organic passivation film 40may have a curved surface without sharpen edges.

Referring to FIG. 15, like the planarization film 26, the organicpassivation film 40 is made of an organic material. Therefore, even whenthe organic passivation film 40 covers the whole of the outgassing hole34, it allows outgassing generated in the planarization film 26 to bereleased from the planarization film 26, unlike the pixel defining layer30.

Hereinafter, a method of manufacturing an organic light-emitting displaydevice according to another embodiment of the present invention will bedescribed with reference to FIGS. 16 and 17. FIGS. 16 and 17 are viewssequentially illustrating a method of manufacturing an organiclight-emitting display device according to another embodiment of thepresent invention.

The method of manufacturing an organic light-emitting display deviceaccording to an embodiment includes forming a buffer layer on asubstrate, forming a semiconductor layer on the buffer layer of atransistor region of the substrate, forming a gate electrode film on thesemiconductor layer, forming a gate electrode on the gate insulatingfilm, forming a source/drain electrode which is insulated from the gateelectrode and is electrically connected to the semiconductor layer by acontact hole, forming a planarization film on the source/drainelectrode, forming a first electrode, which is electrically connected tothe source/drain electrode, on the planarization film, providing a pixeldefining layer which includes an aperture exposing a portion of thefirst electrode to define a pixel region, forming an outgassing hole ina region of the pixel defining layer other than the aperture to exposethe planarization film, forming an organic passivation film on theoutgassing hole to cover edges of the outgassing hole, and forming anorganic light-emitting layer on the first electrode of the pixel regionby using a nozzle printing method. Outgassing generated by theplanarization film in the forming of the organic light-emitting layer isreleased from the planarization film through the organic passivationfilm and the outgassing hole.

The other processes of the manufacturing method according to anembodiment are the same as those of the manufacturing method accordingto the foregoing embodiments, except that forming the organicpassivation film, which covers the edges of the outgassing hole, on theoutgassing hole is further performed after the forming of the outgassinghole.

Referring to FIGS. 16 and 17, an organic passivation film 40 may be madeof an organic material such as DL1000CR. Since the organic passivationfilm 40 covers sharp portions (such as edges) of an outgassing hole 34,it can prevent, for example, a second electrode 38 fromshort-circuiting. The organic passivation film 40 may cover partly orentirely the outgassing hole 34. In addition, the organic passivationfilm 40 may have a curved surface without sharpen edges. Therefore, theedges of the outgassing hole 34 can be covered as indicated by referencecharacter S.

As described above, like a planarization film 26, the organicpassivation film 40 is made of an organic material. Therefore, even whenthe organic passivation film 40 covers the whole of the outgassing hole34, it allows outgassing generated in the planarization film 26 to bereleased from the planarization film 26, unlike a pixel defining layer30.

While embodiments of the present invention has been particularly shownand described, it will be understood by those of ordinary skill in theart that various changes in form and detail may be made therein withoutdeparting from the spirit and scope of the present invention as definedby the following claims. The embodiments should be considered in adescriptive sense only and not for purposes of limitation.

What is claimed is:
 1. An organic light-emitting display devicecomprising: a substrate comprising a transistor region; and a thin-filmtransistor formed over the transistor region of the substrate andcomprising a planarization film which is disposed over a source/drainelectrode and a pixel defining layer which comprises an apertureexposing a portion of a first electrode electrically connected to thesource/drain electrode and defining a pixel region, wherein at least twooutgassing holes are formed in a region of the pixel defining layerother than the aperture and only adjacent to each of a first edge and asecond edge of the pixel region, and wherein an organic passivation filmis formed on a selective area over the pixel defining layer to coveredges of the at least two outgassing holes, wherein the first edge andthe second edge face each other.
 2. The display device of claim 1,wherein the at least two outgassing holes comprise a plurality ofoutgassing holes.
 3. The display device of claim 2, wherein theplurality of outgassing holes are arranged at predetermined intervalsalong a direction that is parallel to the first or second edge of thepixel region.
 4. The display device of claim 1, wherein edges of the atleast two outgassing holes are rounded.
 5. The display device of claim1, wherein the first electrode is made of a material containing one ormore of ITO and IZO.
 6. The display device of claim 1, furthercomprising: an organic light-emitting layer formed over the firstelectrode of the pixel region; and a second electrode formed over theorganic light-emitting layer.
 7. The display device of claim 1, whereinthe organic passivation film has a curved surface.